Wydarzenia w AGH

Wykład zatytułowany Topological Insulators: a class of materials for promising applications wygłosi prof. dr hab. inż. Marek Przybylski (Akademickie Centrum Materiałów i Nanotechnologii AGH; Wydział Fizyki i Informatyki Stosowanej AGH).

Udział

• stacjonarny: ACMiN (ul. Kawiory 30, bud. D-16, sala 1.02A)
• zdalny: platforma MS Teams (link)

Streszczenie

Topological insulators (TIs) like single-crystalline Bi2Se3 and Bi2Te3 possess unique properties of metallic surface states and an insulating/semiconducting volume, which pave the way for advanced technologies. However, the practical applications of TIs are still limited due to the insufficient control over the details of their electronic structure. In particular, defects arising from the growth conditions result in the Fermi level (EF) being located not in the gap but in the volume electronic bands. I will show that neither control over the density of defects nor over the dopant concentration is sufficiently efficient to shift the EF to the gap as small deviations from the stoichiometry. I will report the results of a variety of experiments carried out in the Academic Centre for Materials and Nanotechnology AGH like Scanning Tunneling Microscopy/Spectroscopy and Shubnikov de Haas (SdH) oscillations at miliKelvin temperatures. Finally, I will discuss a few examples of existing and expected applications.